參數(shù)資料
型號(hào): TN5335
廠商: ELAN Microelctronics Corp .
英文描述: N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓350V,低門限2.0V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管)
中文描述: N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS(擊穿電壓350V,2.0V的低門限,?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管)
文件頁數(shù): 1/2頁
文件大?。?/td> 21K
代理商: TN5335
1
TN5335
08/05/99
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and
other Supertex products, refer to the Supertex 1998 Databook.
TN5335
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Low threshold – 2.0V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Modem hook switches
Package Options
Note: See Package Outline section for dimensions.
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
TO-243AA
(SOT-89)
G
D
S
D
Ordering Information
BV
DSS
/
BV
DGS
350V
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
TO-236AB
TO-243AA*
Wafer
15
2.0V
750mA
TN5335K1
TN5335N8
TN5335NW
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Order Number / Package
ProductObjective Specification
Low Threshold
TO-236AB
(SOT-23)
top view
Gate
Source
Drain
相關(guān)PDF資料
PDF描述
TN5335 CONNECTOR ACCESSORY
TN5335K1 CONNECTOR ACCESSORY
TN5335N8 CONNECTOR ACCESSORY
TN5335NW CONNECTOR ACCESSORY
TNET3001 SONET STS-1 Overhead Terminator(SONET STS-1附加終端)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TN5335K1 功能描述:MOSFET 350V 15Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN5335K1-G 功能描述:MOSFET 350V 15Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN5335N8 功能描述:MOSFET 350V 15Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN5335N8-G 功能描述:MOSFET 350V 15Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN5335NW 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs