參數(shù)資料
型號(hào)： TN5335N8
廠商： SUPERTEX INC
元件分類： 功率晶體管
英文描述： CONNECTOR ACCESSORY
中文描述： 0.23 A, 350 V, 15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
封裝： SAME AS SOT-89, 4 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 444K
代理商： TN5335N8
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
TN5335
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Thermal Characteristics
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
0.36W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-236AB
110mA
800mA
200
350
110mA
800mA
TO-243AA
230mA
1.3A
1.6W
15
78
230mA
1.3A
*
I
(continuous) is limited by max rated T
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Symbol
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Parameter
Min
350
0.6
Typ
Max
Unit
V
V
mV/
°
C
nA
μ
A
μ
A
mA
Conditions
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
V
GS
= 0V, I
D
= 100
μ
A
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 100V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 0V, V
DS
= 330V
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 3.0V, I
D
= 20mA
V
GS
= 4.5V, I
D
= 150mA
V
GS
= 10V, I
D
= 200mA
V
GS
= 4.5V, I
D
= 150mA
V
DS
= 25V, I
D
= 200mA
2.0
-4.5
100
1.0
10
1.0
5.0
nA
I
D(ON)
ON-State Drain Current
300
750
mA
R
DS(ON)
Static Drain-to Source
On-State Resistance
15
15
15
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
1.0
%/
°
C
m
125
110
60
22
V
GS
= 0V, V
DS
= 25V
f = 1Mhz
pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
20
15
25
25
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25
ns
Diode Forward Voltage Drop
1.8
V
V
GS
= 0V, I
SD
= 200mA
V
GS
= 0V, I
SD
= 200mA
Reverse Recovery Time
800
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
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