- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385943 > TP2104 (ELAN Microelctronics Corp .) P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-40V，低門限2.0V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | TP2104 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-40V，低門限2.0V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場效應(yīng)管（擊穿電壓至40V，2.0V的低門限，P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | TP2104 |
7-127
TP2104
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
Package Options
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Product marking for SOT-23:
P1L
F
where
F
= 2-week alpha date code
TO-236AB
(SOT-23)
top view
Gate
Source
Drain
S G D
TO-92
BV
DSS
/
BV
DGS
R
DS(ON)
(max)
V
GS(th)
(max)
Order Number/Package
TO-236AB*
TP2104K1
TP2104N3
TO-92
Die
-40V
6.0
-2.0V
TP2104ND
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Ordering Information
Low Threshold
P-Channel Enhancement-Mode
Vertical DMOS FETs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP2104 | CONNECTOR ACCESSORY |
| TP2104K1 | CONNECTOR ACCESSORY |
| TP2104N3 | CONNECTOR ACCESSORY |
| TP2104ND | CONNECTOR ACCESSORY |
| TP2314A | NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP2104K1 | 功能描述:MOSFET 40V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2104K1-G | 功能描述:MOSFET 40V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2104N3 | 功能描述:MOSFET 40V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2104N3-G | 功能描述:MOSFET 40V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2104N3-G P002 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。