參數(shù)資料
型號(hào): TPC8204
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 340K
代理商: TPC8204
TPC8204
2003-02-18
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
114
Single-device operation
(Note 3a)
R
th (ch-a) (1)
167
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
278
°C/W
Marking
(Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: V
DD
= 16 V, T
ch
= 25°C (initial), L = 1.0 mH, R
G
= 25
, I
AR
= 6 A
Note 5: Repetitive rating; pulse width limited by maximum channel temperature.
Note 6:
on lower right of the marking indicates Pin 1.
Weekly code:(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Type
TPC8204
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
Lot No.
Year of manufacture
(One low-order digits of calendar year)
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