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參數(shù)資料
| 型號： | TPC8209 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II) |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 312K |
| 代理商： | TPC8209 |
TPC8209
2003-02-18
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U
MOS II)
TPC8209
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Small footprint due to small and thin package
Low drain
source ON resistance: R
DS (ON)
= 30 m
(typ.)
High forward transfer admittance: |Y
fs
| =
1
0 S (typ.)
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
= 30 V)
Enhancement
mode: V
th
=
1
.3 to 2.5 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
= 20 k
Ω
)
V
DGR
30
V
Gate-source voltage
V
GSS
±20
V
D C
(Note 1)
I
D
5
Drain current
Pulse
(Note 1)
I
DP
20
A
Single-device
operation
(Note 3a)
P
D (1)
1.5
Drain power
dissipation
(t = 10s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
P
D(2)
1.1
W
Single-device
operation
(Note 3a)
P
D (1)
0.75
Drain power
dissipation
(t = 10s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
P
D (2)
0.45
W
Single pulse avalanche energy
(Note 4)
E
AS
32.5
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.1
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.08 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
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