參數(shù)資料
型號： TPC8205
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
中文描述： 東芝場效應(yīng)晶體管硅?頻道馬鞍山型（U型馬鞍山二）
文件頁數(shù)： 3/7頁
文件大?。?/td> 293K
代理商： TPC8205
TPCS8205
2003-02-20
3
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±10 V, V
DS
= 0 V
±10
μA
Drain cut-OFF current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
μA
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
20
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
=
12 V
8
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 200 μA
0.5
1.2
V
R
DS (ON
)
V
GS
= 2.0 V, I
D
= 3.5 A
60
90
R
DS (ON)
V
GS
= 2.5 V, I
D
= 3.5 A
40
60
Drain-source ON resistance
R
DS (ON)
V
GS
= 4 V, I
D
= 4 A
30
45
m
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V, I
D
= 2.5 A
5
10
S
Input capacitance
C
iss
760
pF
Reverse transfer capacitance
C
rss
110
pF
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
130
pF
Rise time
t
r
7
Turn-ON time
t
on
13
Fall time
t
f
13
Switching time
Turn-OFF time
t
off
49
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
11
nC
Gate-source charge
Q
gs
8
nC
Gate-drain (“miller”) charge
Q
gd
V
DD
≈
16 V, V
GS
= 5 V, I
D
= 5 A
3
nC
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
—
—
—
20
A
Forward voltage (diode)
V
DSF
I
DR
= 5 A, V
GS
= 0 V
—
—
1.2
V
相關(guān)PDF資料
PDF描述
TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPC8206 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC8206(TE12L,Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET - Tape and Reel
TPC8207 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
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TPC8207(TE12L,Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH DUAL 20V 6A SOP-8
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