參數(shù)資料
型號(hào): TPS1100Y
廠商: Texas Instruments, Inc.
英文描述: CONNECTOR ACCESSORY
中文描述: 連接器附件
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 155K
代理商: TPS1100Y
TPS1100, TPS1100Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 7
STATIC DRAIN-TO-SOURCE
ON-STATE RESISTANCE (NORMALIZED)
vs
JUNCTION TEMPERATURE
1.2
0.9
0.8
0.6
1.3
1.4
1.5
1.1
1
0.7
–50
0
50
100
150
TJ – Junction Temperature –
°
C
VGS = –10 V
ID = –1A
r
O
Figure 8
– 0.1
0
– 0.6
–1.2
–1.8
I
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN VOLTAGE
–1
–10
– 0.2 – 0.4
VSD – Source-to-Drain Voltage – V
– 0.8 – 1
–1.4 –1.6
Pulse Test
TJ = 150
°
C
TJ = 25
°
C
TJ = –40
°
C
Figure 9
0.2
0.1
0
– 1
– 3
– 5
– 7
0.3
0.4
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
GATE-TO-SOURCE VOLTAGE
0.7
0.5
– 9
– 11
– 13
– 15
VGS – Gate-to-Source Voltage – V
0.6
ID = –1 A
TJ = 25
°
C
r
R
Figure 10
– 1.2
– 1.1
– 1.3
– 1.4
GATE-TO-SOURCE THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
– 1.5
–50
0
50
100
150
– 1
TJ – Junction Temperature –
°
C
áá
áá
áá
ID = –250
μ
A
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