參數(shù)資料
型號(hào): TPS1101YPW
廠商: Texas Instruments, Inc.
英文描述: TELEPHONE CBL 8-CONDUCTOR1000
中文描述: 單P溝道增強(qiáng)型MOSFET
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 161K
代理商: TPS1101YPW
TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 3
– 5
– 4
– 2
– 1
0
– 9
– 3
0
– 1
– 2
– 3
– 4
– 5
– 6
I
– 7
– 6
– 8
DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
– 10
– 7
– 8
– 9 – 10
VGS = –8 V
VGS = –3 V
VGS = –4 V
VGS = –2 V
áá
áá
VDS – Drain-to-Source Voltage – V
VGS = –5 V
TJ = 25
°
C
Figure 4
– 6
– 4
– 2
0
0
– 2
– 3
– 5
– 8
DRAIN CURRENT
vs
GATE-TO-SOURCE VOLTAGE
– 10
– 1
– 4
I
áá
áá
TJ = 25
°
C
TJ = 150
°
C
VGS – Gate-to-Source Voltage – V
TJ = –40
°
C
VDS = –10 V
Figure 5
0.3
0.2
0.1
0
– 0.1
– 1
r
0.4
0.5
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
DRAIN CURRENT
– 10
ID – Drain Current – A
VGS = –4.5 V
VGS = –10 V
TJ = 25
°
C
R
VGS = –2.7 V
VGS = –3 V
Figure 6
500
400
200
100
0 – 1 – 2 – 3 – 4 – 5 – 6
VDS – Drain-to-Source Voltage – V
Cgs
Cgd, Cds(shorted)
C
600
700
CAPACITANCE
vs
DRAIN-TO-SOURCE VOLTAGE
800
– 7 – 8 – 9
–12
300
–10 –11
Coss
Crss
Ciss
VGS = 0 V
f = 1 MHz
TJ = 25
°
C
Crss
Cgd, Coss
Cds
CgsCgd
Cgs
Cgd
Cds
Cgd
Ciss
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