TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
UNIT
Drain-to-source voltage, VDS
Gate-to-source voltage, VGS
–15
V
2 or –15
±
0.39
±
0.21
±
0.5
±
0.25
±
0.74
±
0.34
±
1.17
±
0.53
±
7
–1
V
VGS=
VGS = –2.7 V
2 7 V
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 25
°
C
See Dissipation Rating Table
VGS=
VGS = –3 V
Continuous drain current each device (TJ= 150
C) ID
Continuous drain current, each device (TJ = 150
°
C), ID
A
VGS=
VGS = –4.5 V
4 5 V
VGS=
VGS = –10 V
Pulse drain current, ID
Continuous source current (diode conduction), IS
Continuous total power dissipation
A
A
Storage temperature range, Tstg
Operating junction temperature range, TJ
Operating free-air temperature range, TA
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
–55 to 150
°
C
–40 to 150
°
C
–40 to 125
°
C
°
C
260
DISSIPATION RATING TABLE
DERATING FACTOR
ABOVE TA = 25
°
C
6.71 mW/
°
C
PACKAGE
TA
≤
25
°
C
POWER RATING
TA = 70
°
C
POWER RATING
TA = 85
°
C
POWER RATING
TA = 125
°
C
POWER RATING
D
840 mW
538 mW
437 mW
169 mW
Maximum values are calculated using a derating factor based on R
θ
JA = 149
°
C/W for the package. These devices are
mounted on an FR4 board with no special thermal considerations.