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| 型號： | TPS1120YD |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 180K |
| 代理商： | TPS1120YD |
TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0.3
0.2
0.1
0
– 0.1
– 1
0.4
0.5
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
DRAIN CURRENT
0.7
TJ = 25
°
C
0.6
– 10
ID – Drain Current – A
VGS = –2.7 V
VGS = –3 V
VGS = –4.5 V
VGS = –10 V
–
r
O
Figure 5
200
150
50
0
0 – 1 – 2 – 3 – 4 – 5 – 6
VDS – Drain-to-Source Voltage – V
Cgs
Cgd, Cds(shorted)
C
250
300
CAPACITANCE
vs
DRAIN-TO-SOURCE VOLTAGE
350
– 7 – 8 – 9
–12
100
–10 –11
Coss
Ciss
Crss
VGS = 0
f = 1 MHz
TJ = 25
°
C
Crss
Cgd, Coss
Cds
CgsCgd
Cgs
Cgd
≈
Cds
Cgd
Ciss
Figure 6
Figure 7
1.2
0.9
0.8
0.6
1.3
1.4
STATIC DRAIN-TO-SOURCE
ON-STATE RESISTANCE (NORMALIZED)
vs
JUNCTION TEMPERATURE
1.5
1.1
1
0.7
–50
0
50
100
150
TJ – Junction Temperature –
°
C
VGS = –10 V
ID = –1A
–
r
O
– 0.1
0
– 0.6
–1.2
–1.8
–
I
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN VOLTAGE
–1
–10
– 0.2 – 0.4
VSD – Source-to-Drain Voltage – V
Figure 8
– 0.8 – 1
–1.4 –1.6
Pulse Test
TJ = 150
°
C
TJ = 25
°
C
TJ = –40
°
C
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