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參數(shù)資料
| 型號： | TPS40054QPWPRQ1 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | PLASTIC, HTSSOP-16 |
| 文件頁數(shù)： | 11/28頁 |
| 文件大小： | 571K |
| 代理商： | TPS40054QPWPRQ1 |
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C
BP10 +
Q
gHS ) QgSR
DV
(Farads)
(30)
dv/dt INDUCED TURN-ON
HIGH SIDE MOSFET POWER DISSIPATION
P
COND + IRMS
2
R
DS(on)
1 ) TCR
T
J * 25
O
C
(Watts)
(31)
I
RMS + IOUT
d
A
RMS
(32)
P
SW(fsw) + VIN
I
OUT
t
SW
f
SW (Watts)
(33)
TPS40054-Q1, TPS40055-Q1, TPS40057-Q1
SLAS482A – AUGUST 2005 – REVISED NOVEMBER 2005
APPLICATION INFORMATION (continued)
MOSFETs are susceptible to dv/dt turn-on particularly in high-voltage (VDS) applications. The turn-on is caused
by the capacitor divider that is formed by CGD and CGS. High dv/dt conditions and drain-to-source voltage, on the
MOSFET causes current flow through CGD and causes the gate-to-source voltage to rise. If the gate-to-source
voltage rises above the MOSFET threshold voltage, the MOSFET turns on, resulting in large shoot-through
currents. Therefore, the SR MOSFET should be chosen so that the CGD capacitance is smaller than the CGS
capacitance.
The power dissipated in the external high-side MOSFET is comprised of conduction and switching losses. The
conduction losses are a function of the IRMS current through the MOSFET and the RDS(on) of the MOSFET. The
high-side MOSFET conduction losses are defined by Equation 31.
where:
TCR is the temperature coefficient of the MOSFET RDS(on)
The TCR varies depending on MOSFET technology and manufacturer, but typically ranges between
0.0035 ppm/
°C and 0.010 ppm/°C.
The IRMS current for the high side MOSFET is described in Equation 32.
The switching losses for the high-side MOSFET are described in Equation 33.
where:
IO is the dc-output current
tSW is the switching rise time, typically < 20 ns
fSW is the switching frequency
Typical switching waveforms are shown in Figure 15.
19
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