參數(shù)資料
型號: TPS40131RHBT
廠商: TEXAS INSTRUMENTS INC
元件分類: 穩(wěn)壓器
英文描述: SWITCHING CONTROLLER, 1200 kHz SWITCHING FREQ-MAX, PQCC32
封裝: GREEN, PLASTIC, QFN-32
文件頁數(shù): 13/40頁
文件大?。?/td> 940K
代理商: TPS40131RHBT
www.ti.com
f
OUT
RIPPLE
OUT
sw
V
I
(D)
4.04 A
L
=
D
=
(19)
f
RIPPLE
RIPPLE(TotOUT)
RIPPLE(COUT)
OUT
SW
Co
RIPPLE
I
V
8
C
ESR
I
-
÷
-
è
=
(20)
Step 3: Input Capacitor Selection
f
OUT
IN(min)
RIPPLE(CIN)
IN
SW
I
V
C
V
=
(21)
( )
(
)
RIPPLE(CinESR )
Cin
1
OUT
RIPPLE
2
V
ESR
I
=
+
(22)
IN
OUT
I
(D)
D
(0.5
D)
I
D
=
-
(23)
Step 4: MOSFET Selection
(
)
(
)
2
RIPPLE
SW rms
OUT
I
D
I
7.08
12
÷
=
+
=
÷
è
(24)
(
)
2
SWcond
SWrms
DS(on)(sw )
P
I
R
0.467 W
=
=
(25)
SLVS635 – FEBRUARY 2007
With 1.08-mF output capacitance, the ripple voltage at the capacitor is calculated to be 1.34 mV. In the
specification, the output ripple voltage should be less than 30 mV, so based on the following equation, the
required maximum ESR is 7.1 m
. The selected capacitors can meet this requirement.
The input voltage ripple depends on input capacitance and ESR. The minimum capacitor and the maximum ESR
can be estimated using Equation 21.
For this design, assume VRIPPLE(Cin) is 60 mV and VRIPPLE(CinESR) is 30 mV, so the calculated minimum
capacitance is 120-
μF and the maximum ESR is 1.35 m
. Choosing six 22-μF, 16V, 2-m ESR ceramic
capacitors meets this requirement.
Another important thing for the input capacitor is the RMS ripple current rating. Due to the interleaving of
multi-phase, the input RMS current is reduced. The input ripple current RMS value over load current is
calculated using Equation 23.
So in this design, the maximum input ripple RMS current is calculated to be 8.96 A with the minimum input
voltage. It is about 35% reduction compared with a 40-A single-phase converter design. Each selected ceramic
capacitor has a RMS current rating of 4.3 A, so it is sufficient to meet this requirement.
The MOSFET selection determines the converter efficiency. In this design, the duty cycle is very small so that
the high-side MOSFET is dominated with switching losses and the low-side MOSFET is dominated with
conduction loss. To optimize the efficiency, choose smaller gate charge for the high-side MOSFET and smaller
RDS(on) for the low-side MOSFET. Renesas HAT2167H and HAT2164H are selected as the high-side and
low-side MOSFET respectively.
In the following calculations, only the losses for one phase are shown. The power losses in the high-side
MOSFET is calculated with the following equations.
The RMS current in the high-side MOSFET is shown in Equation 24.
The RDS(on)(sw) is 9.3 m when the MOSFET gate voltage is 4.5 V. The conduction loss is shown in Equation 25.
The switching loss is shown in Equation 26.
20
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