參數(shù)資料
型號(hào)： TPS51163DRCR
廠商： TEXAS INSTRUMENTS INC
元件分類： 穩(wěn)壓器
英文描述： SWITCHING CONTROLLER, 660 kHz SWITCHING FREQ-MAX, PDSO10
封裝： 3 X 3 MM, GREEN, PLASTIC, SON-10
文件頁(yè)數(shù)： 5/26頁(yè)
文件大?。?/td> 2137K
代理商： TPS51163DRCR
f
D1
S1
D2
S2
SW 1
IN
SW
I
t
I
t
P
V
6
2
=
+
÷
÷
÷
è
è
è
D1
O UT
RIP P LE
D 2
O UT
RIP P LE
1
I
and
I
2
=
-
=
+
HFET _ Loss
COND1
SW1
P
=
+
(
)
(
) (
)
2
I
RIPPLE
I
1 - D
I
RMS2
OUT
12
÷
=
+
÷
÷
è
(
)
(
)
2
COND2
RMS2
DS ON 2
P
I
R
=
COND3
OUT
F
D
SW
P
I
V
t
=
f
RR
IN
SW
1
P
Q
V
2
=
f
SR _ Loss
COND2
COND3
RR
P
=
+
www.ti.com ....................................................................................................................................................................................................... SLUS864 – MAY 2009
Also, the switching loss can be approximately described as
(11)
where
ID1 and ID2 are the current magnitudes at the time instance when the MOSFETs switch
(12)
where
ts1 is the MOSFET switching-on time
ts2 is the MOSFET switching-off time
Therefore, the total power loss of the high-side MOSFET is estimated by the sum of the above power losses,
(13)
Synchronous Rectifier MOSFET Power Loss
Power loss associated with the synchronous rectifier (SR) MOSFET mainly consists of RDS(on) conduction loss,
body diode conduction loss and reverse recovery loss.
Similarly to the high-side MOSFET, the conduction loss of the SR MOSFET is also the I2R loss of the MOSFET’s
on-resistance, RDS(on)2. Since the switching on-time of the SR MOSFET is (1-D)×T , where T is the duration of
one switching cycle, the RMS current of the SR MOSFET can be calculated as follows.
(14)
The symchronous rectifier (SR) MOSFET conduction loss is
(15)
The body diode conduction loss is
(16)
where
VF is the forward voltage of the MOSFET body diode
tD is the total conduction time of the body diode in one switching cycle
The body diode recovery time – the time it takes for the body diode to restore its blocking capability from forward
conduction state, determines the reverse recovery losses.
(17)
where
QRR is the reverse recovery charge of the body diode
Therefore, the total power loss of the SR MOSFET is estimated by the sum of the above power losses.
(18)
Copyright 2009, Texas Instruments Incorporated
13
Product Folder Link(s) :TPS51113 TPS51163
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TPS5120 制造商:TI 制造商全稱:Texas Instruments 功能描述:DUAL OUTPUT, TWO PHASE SYNCHRONOUS BUCK DC/DC CONTROLLER
TPS51200 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINK/SOURCE DDR TERMINATION REGULATOR
TPS51200_1 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINK/SOURCE DDR TERMINATION REGULATOR
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