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參數(shù)資料
| 型號： | TPS62650YFF |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 1.7 A SWITCHING REGULATOR, 6600 kHz SWITCHING FREQ-MAX, BGA9 |
| 封裝： | DSBGA-9 |
| 文件頁數(shù)： | 23/38頁 |
| 文件大?。?/td> | 820K |
| 代理商： | TPS62650YFF |
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SLVS808A
– AUGUST 2009 – REVISED FEBRUARY 2011
ELECTRICAL CHARACTERISTICS
Minimum and maximum values are at VI = 2.3V to 5.5V, VO = 1.2 V, EN = 1.8V, EN_DCDC bit = 1, AUTO mode and
TA = -40°C to 85°C; Circuit of Parameter Measurement Information section (unless otherwise noted). Typical values are at
VI = 3.6V, VO = 1.2 V, EN = 1.8V, EN_DCDC bit = 1, AUTO mode and TA = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
VI
Input voltage range
2.3
5.5
V
VI = 3.6 V, IO = 0 mA, -40°C ≤ TJ≤ 85°C. Device not switching
38
58
μA
IQ
Operating quiescent current
VI = 3.6 V, IO = 0 mA. PWM mode
5.35
mA
VI = 3.6 V, EN = GND, EN_DCDC bit = X, -40°C ≤ TJ≤ 85°C
0.5
3.5
μA
I(SD)
Shutdown current
VI = 3.6 V, EN = VI, EN_DCDC bit = 0, -40°C ≤ TJ≤ 85°C
0.5
3.5
μA
UVLO
Undervoltage lockout threshold
2.05
2.15
V
ENABLE, VSEL, SDA, SCL
VIH
High-level input voltage
0.9
V
VIL
Low-level input voltage
0.4
V
Ilkg
Input leakage current
Input tied to GND or VI, -40°C ≤ TJ≤ 85°C
0.01
0.7
μA
POWER SWITCH
VI = V(GS) = 3.6 V
255
rDS(on)
P-channel MOSFET on resistance
m
VI = V(GS) = 2.5 V
335
Ilkg
P-channel leakage current, PMOS
V(DS) = 5.5 V, -40°C ≤ TJ≤ 85°C
1
μA
VI = V(GS) = 3.6 V
140
rDS(on)
N-channel MOSFET on resistance
m
VI = V(GS) = 2.5 V
200
Ilkg
N-channel leakage current, NMOS
V(DS) = 5.5 V, -40°C ≤ TJ≤ 85°C
1
μA
Discharge resistor for power-down
rDIS
15
50
sequence
P-MOS current limit
2.3 V
≤ VI ≤ 4.8 V. Open loop
1350
1500
1700
mA
Input current limit under short-circuit
VO = 0 V
11
mA
conditions
Thermal shutdown
140
°C
Thermal shutdown hysteresis
15
°C
OSCILLATOR
fSW
Oscillator frequency
IO = 0 mA. PWM mode
5.4
6
6.6
MHz
OUTPUT
2.3 V
≤ VI ≤ 5.5 V, 0 mA ≤ IO(DC) ≤ 800 mA
VO = 0.75 V, 1.05 V, 1.20 V, 1.4375 V (TPS62650)
–2%
2%
VO = 0.75 V, 0.95 V, 1.10 V, 1.4375 V (TPS62651)
PWM operation
Regulated DC output
voltage accuracy
2.3 V
≤ VI ≤ 5.5 V, 0 mA ≤ IO(DC) ≤ 800 mA
VO = 0.75 V, 1.05 V, 1.20 V, 1.4375 V (TPS62650)
–2%
3%
VO = 0.75 V, 0.95 V, 1.10 V, 1.4375 V (TPS62651)
VO
TPS62650/1
PFM/PWM Operation
Regulated DC output
VI = 3.6 V, VO = 1.20 V, IO(DC) = 50 mA
-0.5%
+0.5%
voltage temperature drift
-40
°C ≤ TJ ≤ 105°C. PWM operation
Line regulation
VI = VO + 0.5 V (min 2.3 V) to 5.5 V, IO(DC) = 200 mA
0.13
%/V
Load regulation
IO(DC) = 0 mA to 800 mA
–0.00046
%/mA
Feedback input resistance
480
k
VO = 1.05 V, VSEL = GND, IO(DC) = 1 mA
16
mVPP
PFM operation
ΔVO
Power-save mode ripple voltage
VO = 1.20 V, VSEL = VI, IO(DC) = 1 mA
16
mVPP
PFM operation
DAC
TPS62650
Resolution
6
Bits
TPS62651
Differential nonlinearity
Specified monotonic by design
±0.4
LSB
2009–2011, Texas Instruments Incorporated
3
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