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| 型號(hào)： | TPS65055RSMR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類(lèi)： | 穩(wěn)壓器 |
| 英文描述： | 1.8 A DUAL SWITCHING CONTROLLER, 2475 kHz SWITCHING FREQ-MAX, PQCC32 |
| 封裝： | 4 X 4 MM, GREEN, PLASTIC, QFN-32 |
| 文件頁(yè)數(shù)： | 34/41頁(yè) |
| 文件大?。?/td> | 1276K |
| 代理商： | TPS65055RSMR |
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SLVS844 – SEPTEMBER 2008.......................................................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
VIN = 3.6 V, EN = VIN, MODE = GND, L = 2.2 H, COUT = 22 F, TA = –40°C to 85°C, Typical values are at TA = 25°C (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input bias current SDAT, SCLK,
EN_DCDC1, EN_DCDC2, DEFDCDC2,
IIN
0.01
1.0
A
DEFLDO1, DEFLDO2, EN_LDO1, EN_LDO2,
EN_LDO3, EN_LDO4
VIH
DEFLDO1, DEFLDO2
VCC = 2.5 V
1.0
V
VIL
DEFLDO1, DEFLDO2
VCC = 6.5 V
0.38
V
Pull-down resistor at DEFLDO1, DEFLDO2 for
RPD
Pulled to GND
1
k
LOW signal
Pull-up resistor at DEFLDO1, DEFLDO2 for
RPU
Pulled to VCC
1
k
HIGH signal
RGNDop
Resistance at DEFLDO1, DEFLDO2 to GND to
10
M
en
detect open state
RVCCop
Resistance at DEFLDO1, DEFLDO2 to Vcc to
20
M
en
detect open state
POWER SWITCH
VINDCDC1/2 = 3.6 V
280
630
P-channel MOSFET on
DCDC1,
rDS(on)
m
resistance
DCDC2
VINDCDC1/2 = 2.5 V
400
ILD_PMOS
P-channel leakage current
VDS = 6 V
1
A
VINDCDC1/2 = 3.6 V
220
450
N-channel MOSFET on
DCDC1,
rDS(on)
m
resistance
DCDC2
VINDCDC1/2 = 2.5 V
320
ILK_NMOS
N-channel leakage current
VDS = 6 V
7
10
A
Forward current limit PMOS
DCDC1
0.85
1.0
1.15
I(LIMF)
(high-side) and NMOS (low
2.5 V
≤ VIN ≤ 6 V
A
DCDC2
0.85
1.0
1.15
side)
TSD
Thermal shutdown
Increasing junction temperature
150
°C
Thermal shutdown hysteresis
Decreasing junction temperature
20
°C
OSCILLATOR
fSW
Oscillator frequency
2.025
2.25
2.475
MHz
4
Copyright 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS65055
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