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參數(shù)資料
| 型號： | TQ3131 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V Cellular Band CDMA/AMPS LNA IC |
| 中文描述： | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC PACKAGE-8 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 226K |
| 代理商： | TQ3131 |
TQ3131
Data Sheet
8
For additional information and latest specifications, see our website:
www.triquint.com
Gamma Opt analysis for TQ3131 Amps Mode
Freq (MHz)
Γ
Opt
Γ
Angle
Fmn (dB)
R noise
700
0.61
40.6
1.22
33.0
880
0.70
54.2
1.09
27.4
1000
0.56
56.6
1.42
27.0
Gain Control via Pin 4 Inductance
The source connection of the LNA cascode is brought out
separately through pin 4. That allows the designer to make
some range of gain adjustment. The total amount of inductance
present at the source of the cascode is equal to the bond wire
plus package plus external inductance. One should generally
use an external inductance such that gain in the high gain
CDMA mode = 13.0. Although it is possible to increase the gain
of the TQ3131 by using little or no degeneration, input intercept
will be degraded.
Figure 2 shows how a spiral pc board trace can be used as the
external inductance. It is suggested that such a circuit be used
for the initial design prototype. Then the optimuminductance
can be found by simply solder bridging across the inductor. The
final pc board design can then include the proper shorted
version of the inductor.
Figure 2 Showing Lbrd and Grounding on
Evaluation Board
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