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參數(shù)資料
| 型號： | TQ3131 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V Cellular Band CDMA/AMPS LNA IC |
| 中文描述： | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC PACKAGE-8 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 226K |
| 代理商： | TQ3131 |
TQ3131
Data Sheet
For additional information and latest specifications, see our website:
www.triquint.com
9
Selection of the Vdd Bypass Cap for Optimum
Performance
The Vdd bypass capacitor has the largest effect on the LNA
output match, and is required for proper operation. Because the
input match affects the output match to some degree as well,
the process of picking the bypass cap value involves some
iteration. First, an input match is selected which gives adequate
gain and noise figure. Then the bypass capacitor is varied to
give the best output match. Generally, the poorer the chip
grounding, the smaller the bypass capacitor value will be. The
demo board achieves 11-12dB of return loss which is adequate
for connection directly to the input of a SAW filter.
Grounding
An optimal ground for the device is important in order to achieve
datasheet specified performance.
Symptoms of a poor ground include reduced gain and the
inability to achieve >2:1 VSWR at the output when the input is
matched. It is recommended to use multiple vias to a md
ground plane layer. The vias at pins 2 and 7 to this layer should
be as close to the lead pads as possible Additionally, the
ground return on the Vdd bypass cap should provide mnimal
inductance back to chip pins 2 and 7.
TQ3131 S-Parameters
Following are S-Parameter graphs for both the high gain and the
AMPS modes. Data was taken on a single “nomnal” device at
2.8v Vdd. The reference planes were set at the end of the
package pins. Note that the plots are almost identical for both
modes.
TQ3131 High Gain Mode S-Parameters S11
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