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| 型號(hào)： | TRANSIENT |
| 英文描述： | Transient Protection of MOSFETS (35k) |
| 中文描述： | MOSFET的瞬態(tài)保護(hù)（為35K） |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 12K |
| 代理商： | TRANSIENT |
1999 May 07
128
Philips Semiconductors
Letter Symbols - Transistors
General
The static value is the slope of the line from the origin to
the operating point on the appropriate characteristic curve,
i.e. the quotient of the appropriate electrical quantities at
the operating point.
The lower-case variant of a subscript is used for the
designation of small-signal values.
Examples:
h
fe
small-signal value of the short-circuit
forward current transfer ratio in
common-emitter configuration
small-signal value of the external
impedance.
Z
e
= R
e
+ jX
e
If more than one subscript is used, subscripts for which
both styles exist are either all upper-case or all lower-case.
Examples: h
FE
, y
RE
, h
fe
.
Subscripts for four-pole matrix parameters
The first letter subscript (or double numeric subscript)
indicates input, output, forward transfer or reverse
transfer.
Examples: h
i
(or h
11
), h
o
(or h
22
), h
f
(or h
21
), h
r
(or h
12
).
A further subscript is used for the identification of the circuit
configuration. When no confusion is possible, this further
subscript may be omitted.
Examples: h
fe
(or h
21e
), h
FE
(or h
21E
).
D
ISTINCTION BETWEEN REAL AND IMAGINARY PARTS
If it is necessary to distinguish between real and imaginary
parts of electrical parameters, no additional subscripts
should be used. If basic symbols for the real and imaginary
parts exist, these may be used.
Examples: Z
i
= R
i
+ jX
i
, y
fe
= g
fe
+ jb
fe
.
If such symbols do not exist, or if they are not suitable, the
following notation is used:
Examples:
Re (h
ib
) etc. for the real part of h
ib
Im (h
ib
) etc. for the imaginary part of h
ib
.
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