參數(shù)資料
型號: TS80C52X2-VIBB
廠商: TEMIC SEMICONDUCTORS
元件分類: 微控制器/微處理器
英文描述: 8-BIT, MROM, 40 MHz, MICROCONTROLLER, PQFP44
封裝: PLASTIC, LCC-44
文件頁數(shù): 31/56頁
文件大?。?/td> 689K
代理商: TS80C52X2-VIBB
37
Rev. C - Aug. 31, 1999
TS80C52X2
The encryption array cannot be directly verified. Verification of the encryption array is done by observing that the
code array is well encrypted.
Figure 12. Programming and Verification Signal’s Waveform
8.4 EPROM Erasure (Windowed Packages Only)
Erasing the EPROM erases the code array, the encryption array and the lock bits returning the parts to full
functionality.
Erasure leaves all the EPROM cells in a 1’s state (FF).
8.4.1 Erasure Characteristics
The recommended erasure procedure is exposure to ultraviolet light (at 2537 ) to an integrated dose at least 15
W-sec/cm2. Exposing the EPROM to an ultraviolet lamp of 12,000
W/cm2 rating for 30 minutes, at a distance
of about 25 mm, should be sufficient. An exposure of 1 hour is recommended with most of standard erasers.
Erasure of the EPROM begins to occur when the chip is exposed to light with wavelength shorter than approximately
4,000 . Since sunlight and fluorescent lighting have wavelengths in this range, exposure to these light sources
over an extended time (about 1 week in sunlight, or 3 years in room-level fluorescent lighting) could cause
inadvertent erasure. If an application subjects the device to this type of exposure, it is suggested that an opaque
label be placed over the window.
Control signals
Data In
ALE/PROG
A0-A12
Programming Cycle
100
s
D0-D7
EA/VPP
Data Out
Read/Verify Cycle
12.75V
5V
0V
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