參數(shù)資料
型號(hào): TSA5059TS
廠商: NXP SEMICONDUCTORS
元件分類: XO, clock
英文描述: 2.7 GHz I2C-bus controlled low phase noise frequency synthesizer
中文描述: PLL FREQUENCY SYNTHESIZER, 2700 MHz, PDSO16
封裝: 4.40 MM, PLASTIC, MO-152, SOT-369-1, SSOP-16
文件頁(yè)數(shù): 12/24頁(yè)
文件大小: 151K
代理商: TSA5059TS
1999 Oct 05
12
Philips Semiconductors
Preliminary specification
2.7 GHz I
2
C-bus controlled low phase
noise frequency synthesizer
TSA5059
CHARACTERISTICS
V
CC
= 4.5 to 5.5 V; T
amb
=
20 to +85
°
C; f
xtal
= 4 MHz; measured according to Fig.4; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply (pin V
CC
)
V
CC
I
CC
V
CC(POR)
RF inputs (pins RFA and RFB)
supply voltage
supply current
supply voltage below which POR is active T
amb
= 25
°
C
4.5
30
5.0
37
2.75
5.5
45
V
mA
V
T
amb
= 25
°
C
f
i(RF)
V
i(RF)(rms)
RF input frequency
RF input voltage (RMS value)
64
12.6
25
7.1
30
22.4
20
64
128
2700
300
+2.5
300
+2.5
300
+2.5
131071
262142
MHz
mV
dBm
mV
dBm
mV
dBm
pF
f
i(RF)
between 64 and
150 MHz; note 1
f
i(RF)
between 150 and
2200 MHz; note 1
f
i(RF)
between 2.2 and
2.7 GHz; note 1
Z
i(RF)
C
i(RF)
MDR
RF input impedance
RF input capacitance
main divider ratio
see Fig.7
see Fig.7
prescaler disabled
prescaler enabled
Crystal oscillator (pin XTAL)
f
xtal
Z
XTAL
Z
XTAL
P
XTAL
f
i(ext)
V
i(ext)(p-p)
crystal frequency
crystal oscillator negative impedance
recommended crystal series resistance
crystal drive level
external reference input frequency
external reference input voltage
(peak-to-peak value)
4
400
2
200
680
40
16
200
20
500
MHz
μ
W
MHz
mV
4 MHz crystal
4 MHz crystal
4 MHz crystal; note 2
note 3
note 3
Phase comparator and charge pump
f
comp
N
comp
comparison frequency
equivalent phase noise at the phase
detector input
157
2
MHz
dBc/Hz
f
comp
= 250 kHz;
C1 = C0 = 1;
in the loop bandwidth
C1 = 0; C0 = 0
C1 = 0; C0 = 1
C1 = 1; C0 = 0
C1 = 1; C0 = 1
I
cp
charge pump current
100
210
450
920
10
135
280
600
1230
0
170
350
750
1540
+10
μ
A
μ
A
μ
A
μ
A
nA
I
cpl
charge pump leakage current
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