參數(shù)資料
型號(hào): TSC87251G2D-L16CB
廠商: TEMIC SEMICONDUCTORS
元件分類: 微控制器/微處理器
英文描述: B/16-BIT MICROCONTROLLER WITH SERIAL COMMUNICATION INTERFACES
中文描述: 16-BIT, OTPROM, 16 MHz, MICROCONTROLLER, PQCC44
封裝: PLASTIC, LCC-44
文件頁(yè)數(shù): 16/28頁(yè)
文件大?。?/td> 153K
代理商: TSC87251G2D-L16CB
Qualpack TSC87251G2D
16 Rev 0 – October 1999
3.3.1.3 Time Dependent Dielectric Breackdown
QBD MEASUREMENT:
The critical charge, supported by the thin oxide and related to the extrinsic and intrinsic defects, is
measured on TOX/P- and TOX/N- capacitors. The tested capacitor areas are varying from 4e-4 to 5e-2
cm2. Two types of capacitors with poly overlaping the field oxide (DEC) and poly non overlaping the
field oxide (INC) are measured. The distributions have been obtained from 750 measurements for each
area and type of capacitors on 10 different lots.
Extrinsic defects
:
The two graphs here after represent the % of failures vs area for Qbd below or equal to 0.1 Cb/cm2. The
law of Poisson is used to determine the D0 defect density of the extrinsic defects:
Y=1-exp(-Area * DO)
Poly overlaping the Field oxide on Tox/P- and Tox/N-:
The DO is found to be 1.1 def/cm2. This result is in agreement with the goal for D0 of 1 def/cm2.
0
0,02
0,04
0,06
-0,06
-0,04
-0,02
0
Area in cm2
L
DEC P-
DEC N-
Poisson
Qbd < 0.1Cb/cm2
CAPA WITH POLY OVERLAPING THE FIELD OXIDE
DO=1.1 def/cm2
相關(guān)PDF資料
PDF描述
TSC83251G2D-L16CB B/16-BIT MICROCONTROLLER WITH SERIAL COMMUNICATION INTERFACES
TSC83251G2D-L16CED B/16-BIT MICROCONTROLLER WITH SERIAL COMMUNICATION INTERFACES
TSC87251G2D B/16-BIT MICROCONTROLLER WITH SERIAL COMMUNICATION INTERFACES
TSC87251G2D-16CB B/16-BIT MICROCONTROLLER WITH SERIAL COMMUNICATION INTERFACES
TSC87251G2D-24CB B/16-BIT MICROCONTROLLER WITH SERIAL COMMUNICATION INTERFACES
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