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參數(shù)資料
| 型號： | TSHG5510 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | TSHG5510 - High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero |
| 中文描述： | Infrared Emitters High Speed Emitter 5V 180mW 830nm 38Deg |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 85K |
| 代理商： | TSHG5510 |
TSHG5510
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Aug-11
3
Document Number: 81887
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01
0.1
t
p
- Pulse Duration (ms)
1
10
100
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
I
F
0.001
0.01
0.1
1
10
0
0.5
1
1.5
2
2.5
3
3.5
4
21009
I
F
V
F
- Forward Voltage (V)
0.1
1
10
100
1000
1
10
100
1000
21010
I
F
- Forward Current (mA)
I
e
t
p
= 100 μs
t
p
/T = 0.002
0.1
1
10
100
1000
1
10
100
1000
I
F
- Forward Current (mA)
φ
e
21062
t
p
= 100 μs
t
p
/T = 0.002
740
800
λ
- Wa
v
elength (nm)
900
16972_1
0
0.25
0.5
0.75
1.0
1.25
Φ
e
v
e
0
- 90 - 70 - 50 - 30 - 10 0 10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
30
50
70
90
21012
I
e
v
e
Angle (°)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TSHG620 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
| TSHG6200 | 功能描述:紅外發(fā)射源 High Speed Emitter 5V 50mW 850nm 10 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHG6200 | 制造商:Vishay Semiconductors 功能描述:IR Emitting Diode |
| TSHG6200_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
| TSHG6200_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
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