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參數(shù)資料
| 型號： | TSI180B1RL |
| 英文描述： | TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE |
| 中文描述： | Set接口端子保護(hù)和二極管橋 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 160K |
| 代理商： | TSI180B1RL |
TSIxxB1
6/9
Symbol
I
PP
Parameter
Value
Unit
Non repetitive peak on-sate current (see note 1)
10/1000
μ
s (open circuit voltage wave shape 10/100
μ
s)
5/310
μ
s (open circuit voltage wave shape 10/700
μ
s)
2/10
μ
s (open circuit voltage wave shape 2/10
μ
s)
Maximum DC current
Non repetitive surge peak on-state current
30
40
75
0.2
5
3.5
A
I
F
A
A
I
TSM
tp = 20 ms
t = 1s
T
stg
T
j
T
L
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s
- 55 to +150
150
260
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Note 1 :
Pulse waveform :
10/1000
μ
s
5/310
μ
s
2/10
μ
s
tr=10
μ
s
tr=5
μ
s
tr=2
μ
s
tp=1000
μ
s
tp=310
μ
s
tp=10
μ
s
100
50
% I
PP
t
t
r
p
0
t
Symbol
R
th(j-a)
Parameter
Value
170
Unit
°C/W
Junction to ambient
THERMAL RESISTANCE
Symbol
Parameter
V
RM
Stand-off voltage
V
BO
Breakover voltage
V
BR
Breakdown voltage
I
H
Holding current
I
BO
Breakover current
I
RM
Leakage current at V
RM
I
PP
Peak pulse current
C
Capacitance
α
T
Temperature coefficient
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
V
I
V
RM
BO
V
RM
I
I
H
I
BO
PP
I
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