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參數(shù)資料
| 型號(hào)： | TSM12N02 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 149K |
| 代理商： | TSM12N02 |
TSM12N02
2-3
2006/05 rev. A
Electrical Characteristics
T
J
= 25
o
C, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
20
--
--
V
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 8A
R
DS(ON)
--
21
30
m
Ω
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 6A
R
DS(ON)
--
30
40
m
Ω
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
0.6
--
--
V
Zero Gate Voltage Drain Current
V
DS
= 20V, V
GS
= 0V
I
DSS
--
--
1.0
uA
Gate Body Leakage
V
GS
= ±12V, V
DS
= 0V
I
GSS
--
--
±100
nA
Forward Transconductance
V
DS
=10V, I
D
= 6A
g
fs
7
13
--
S
Dynamic
Total Gate Charge
Q
g
--
7.1
--
Gate-Source Charge
Q
gs
--
1.96
--
Gate-Drain Charge
V
DS
= 10V, I
D
= 6A,
V
GS
= 4.5V
Q
gd
--
2.94
--
nC
Turn-On Delay Time
t
d(on)
--
4.9
--
Turn-On Rise Time
t
r
--
2.6
--
Turn-Off Delay Time
t
d(off)
--
15.7
--
Turn-Off Fall Time
V
DD
= 10V, R
L
= 10
Ω
,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6
Ω
t
f
--
14
--
nS
Input Capacitance
C
iss
--
620
--
Output Capacitance
C
oss
--
124
--
Reverse Transfer Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
95
--
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
1.7
A
Diode Forward Voltage
I
S
= 1.7A, V
GS
= 0V
V
SD
--
--
1.2
V
Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%
2. Negligible, Dominated by circuit inductance.
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| TSM12N02_07 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V N-Channel MOSFET |
| TSM12N02CP | 功能描述:MOSFET 20V 12A 60W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM12N02CP R0 | 制造商:SKMI/Taiwan 功能描述:TO-252;20V 12AMP N CHANEL MOSF |
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| TSM12N65 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:650V N-Channel Power MOSFET |
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