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參數資料
| 型號： | TSM1N60L_07 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 600V N-Channel Power MOSFET |
| 中文描述： | 600V的N溝道功率MOSFET |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 345K |
| 代理商： | TSM1N60L_07 |
TSM1N60L
600V N-Channel Power MOSFET
1/7
Version: A07
TO-252
TO-251
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
●
●
●
●
discrete fast recovery diode.
●
I
DSS
and V
DS(on)
specified at elevated temperature
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
Ordering Information
Part No.
Package
Packing
TSM1N60LCP RO
TO-252
2.5Kpcs / 13” Reel
TSM1N60LCH C5
TO-251
50pcs / Tube
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
600
V
Gate-Source Voltage
V
GS
I
D
±30
V
Continuous Drain Current
1
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
I
DM
I
S
4
A
1
A
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25
Ω
)
Maximum Power Dissipation @Ta = 25
o
C
EAS
20
mJ
P
D
2.5
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
-55 to +150
o
C
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
600
12 @ V
GS
=10V
1
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
N-Channel MOSFET
相關PDF資料 |
PDF描述 |
|---|---|
| TSM1N60L | N-Channel Power Enhancement Mode MOSFET |
| TSM1N60LCH | N-Channel Power Enhancement Mode MOSFET |
| TSM1N60LCP | N-Channel Power Enhancement Mode MOSFET |
| TSM1N60S_07 | 600V N-Channel Power MOSFET |
| TSM1N60SCT | 600V N-Channel Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TSM1N60LCH | 功能描述:MOSFET 600V 1.0A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM1N60LCH C5 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) TO-251 Tube |
| TSM1N60LCP | 功能描述:MOSFET 600V 1A N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM1N60LCP R0 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) TO-252 T/R |
| TSM1N60SCT | 功能描述:MOSFET 600V 1A N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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