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參數(shù)資料
| 型號： | TSM1N60SCT |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 600V N-Channel Power MOSFET |
| 中文描述： | 600V的N溝道功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 323K |
| 代理商： | TSM1N60SCT |
TSM1N60S
600V N-Channel Power MOSFET
1/6
Version: A07
TO-92
V
DS
(V)
General Description
The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
●
●
●
●
discrete fast recovery diode.
●
I
DSS
and V
DS(on)
specified at elevated temperature
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
Ordering Information
Part No.
Package
Packing
TSM1N60SCT B0
TO-92
1Kpcs / Bulk
TSM1N60SCT A3
TO-92
2Kpcs / Ammo
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25
Ω
)
Maximum Power Dissipation @Ta = 25
o
C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
600
±30
0.3
1.2
1
Unit
V
V
A
A
A
EAS
50
mJ
P
D
T
J
3
W
o
C
o
C
+150
T
J
, T
STG
-55 to +150
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
N-Channel MOSFET
PRODUCT SUMMARY
R
DS(on)
(
Ω
)
I
D
(A)
600
11 @ V
GS
=10V
0.3
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| TSM1N60SCT A3 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo |
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| TSM1NB60CP | 制造商:Taiwan Semiconductor 功能描述:MOSFET N 600V 0.5A D-PAK 制造商:Taiwan Semiconductor 功能描述:MOSFET, N, 600V, 0.5A, D-PAK 制造商:Taiwan Semiconductor 功能描述:MOSFET, N, 600V, 0.5A, D-PAK, Transistor Polarity:N Channel, Continuous Drain Cu |
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