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參數(shù)資料
| 型號： | TSM2312CX |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V N-Channel Enhancement Mode MOSFET |
| 中文描述： | 20V的N溝道增強型MOS管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 164K |
| 代理商： | TSM2312CX |
TSM2312
2-2
2003/12 rev. A
Electrical Characteristics
Ta = 25
o
C, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
20
--
--
V
Drain-Source On-State
Resistance
V
GS
= 4.5V, I
D
= 5.0A
R
DS(ON)
--
25
33
Drain-Source On-State
Resistance
V
GS
= 2.5V, I
D
= 4.0A
R
DS(ON)
--
35
40
m
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
0.45
--
--
V
Zero Gate Voltage Drain Current
V
DS
= 20V, V
GS
= 0V
I
DSS
--
--
1.0
uA
Gate Body Leakage
V
GS
= ± 8V, V
DS
= 0V
I
GSS
--
--
± 100
nA
On-State Drain Current
V
DS
≧
10V, V
GS
= 4.5V
I
D(ON)
15
--
--
A
Forward Transconductance
V
DS
= 5V, I
D
= 5.0A
g
fs
--
20
--
S
Dynamic
Total Gate Charge
Q
g
--
11
14
Gate-Source Charge
Q
gs
--
1.4
--
Gate-Drain Charge
V
DS
= 10V, I
D
= 3.6A,
V
GS
= 4.5V
Q
gd
--
2.2
--
nC
Turn-On Delay Time
t
d(on)
--
15
25
Turn-On Rise Time
t
r
--
40
60
Turn-Off Delay Time
t
d(off)
--
48
70
Turn-Off Fall Time
V
DD
= 10V, R
L
= 10
,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6
t
f
--
31
45
nS
Input Capacitance
C
iss
--
900
--
Output Capacitance
C
oss
--
140
--
Reverse Transfer Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
100
--
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
1.6
A
Diode Forward Voltage
Note : pulse test: pulse width <=300uS, duty cycle <=2%
I
S
= 1.0A, V
GS
= 0V
V
SD
--
0.75
1.2
V
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參數(shù)描述 |
|---|---|
| TSM2312CX RF | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R 制造商:Taiwan Semiconductor 功能描述:Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R |
| TSM2312CXRF | 制造商:Taiwan Semiconductor 功能描述:MOSFET P-Channel 20V 4.9A SOT23 |
| TSM2313 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V P-Channel MOSFET |
| TSM2313_08 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V P-Channel MOSFET |
| TSM2313CX | 功能描述:MOSFET 20V P channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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