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參數(shù)資料
| 型號(hào)： | TSM2323CXRF |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V P-Channel MOSFET |
| 中文描述： | 20V的P通道MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 320K |
| 代理商： | TSM2323CXRF |
TSM2323
20V P-Channel MOSFET
1/6
Version: A07
SOT-23
R
DS(on)
(m
Ω
)
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM2323CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
±8
V
Continuous Drain Current, V
GS
@4.5V.
I
D
-4.7
A
Pulsed Drain Current, V
GS
@4.5V
I
DM
-20
A
Continuous Source Current (Diode Conduction)
a,b
I
S
-1.0
A
Ta = 25
o
C
1.25
Maximum Power Dissipation
Ta = 70
o
C
P
D
0.8
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Case Thermal Resistance
R
JC
75
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
R
JA
250
o
C/W
PRODUCT SUMMARY
V
DS
(V)
I
D
(A)
39 @ V
GS
= -4.5V
-4.7
52 @ V
GS
= -2.5V
-4.1
-20
68 @ V
GS
= -1.8V
-2.0
Pin Definition:
1. Gate
2. Source
3. Drain
Block Diagram
P-Channel MOSFET
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