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參數資料
| 型號： | TSM2832CY |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V N-Channel Enhancement Mode MOSFET |
| 中文描述： | 20V的N溝道增強型MOS管 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 170K |
| 代理商： | TSM2832CY |
TSM2832
1-1
2003/12 rev. A
TSM2832
20V N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Drain
3. Source
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 3.6A = 60m
R
DS (on)
, Vgs @ 2.5V, Ids @ 3.1A = 90m
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
2.5V operating voltage
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM2832CY
Tape & Reel
1kpcs per reel
SOT-89
Absolute Maximum Rating
(Ta = 25
℃
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20V
V
Gate-Source Voltage
V
GS
± 8
V
Continuous Drain Current
I
D
3.6
A
Pulsed Drain Current
I
DM
10
A
Ta = 25
o
C
1.5
Maximum Power Dissipation
Ta = 75
o
C
P
D
1.0
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
T
L
5
S
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
R
θ
ja
65
o
C/W
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