參數(shù)資料
型號: TSTS7300
廠商: VISHAY SEMICONDUCTORS
元件分類: 激光器
英文描述: TSTS7300 - Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
中文描述: Infrared Emitters 12 Degree 170mW 950nm
文件頁數(shù): 1/5頁
文件大?。?/td> 132K
代理商: TSTS7300
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
www.vishay.com
264
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81048
Rev. 1.8, 04-Sep-08
TSTS7300
Vishay Semiconductors
DESCRIPTION
TSTS7300 is an infrared, 950 nm emitting diode in GaAs
technology in a hermetically sealed TO-18 package with
lens.
FEATURES
Package type: leaded
Package form: TO-18
Dimensions (in mm):
4.7
Peak wavelength:
λ
p
= 950 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 12°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Lead
(Pb)-free
component
RoHS 2002/95/EC and WEEE 2002/96/EC
in
accordance
with
APPLICATIONS
Radiation source in near infrared range
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
amb
= 25 °C, unless otherwise specified
94
8
642
PRODUCT SUMMARY
COMPONENT
TSTS7300
I
e
(mW/sr)
6.3
(deg)
± 12
λ
P
(nm)
950
t
r
(ns)
800
ORDERING INFORMATION
ORDERING CODE
TSTS7300
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TO-18
MOQ: 1000 pcs, 1000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
P
V
T
j
T
stg
R
thJA
R
thJC
VALUE
5
250
500
2.5
170
500
100
- 55 to + 100
450
150
UNIT
V
mA
mA
A
mW
mW
°C
°C
K/W
K/W
T
case
25 °C
t
p
/T = 0.5, t
p
100 μs, T
case
25 °C
t
p
100 μs
Power dissipation
T
case
25 °C
Junction temperature
Storage temperature range
Thermal resistance junction/ambient
Thermal resistance junction/case
leads not soldered
leads not soldered
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