參數(shù)資料
型號(hào): TVU150A
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 60 V,Vceo: 30 V,Vebo: 3.0 V)(NPN 硅型射頻功率晶體管(Ic:25A,Vcbo: 60 V,Vceo: 30 V,Vebo: 3.0 V))
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 18K
代理商: TVU150A
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 100 mA
BV
CEO
I
C
= 100 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CE
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 3.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60
30
3.0
15
UNITS
V
V
V
mA
---
10
70
C
OB
V
CB
= 28 V
f = 1.0 MHz
100
pF
P
G
V
CE
= 28 V I
C
= 2 X 500 mA f = 860 MHz
P
OUT
= 150 W
6.5
dB
NPN SILICON RF POWER TRANSISTOR
TVU150A
DESCRIPTION:
The
ASI TVU150A
is Designed for
FEATURES:
Input Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
25 A
V
CBO
60 V
V
CEO
30 V
V
EBO
3.0 V
P
DISS
310 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
0.55
O
C/W
PACKAGE STYLE .450 BAL FLG(B)
ORDER CODE: ASI10653
MINIMUM
inches / mm
.411 / 10.44
.825 / 20.96
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.865 / 21.97
.421 / 10.69
H
DIM
K
L
I
J
.002 / 0.05
.095 / 2.41
.006 / 0.15
.105 / 2.67
.250 / 6.35
M
.373 / 9.47
.385 / 9.78
.115 / 2.92
.135 / 3.43
.457 / 11.61
.445 / 11.30
1.675 / 42.55
1.685 / 42.80
.205 / 5.21
A
B
.120 x 45°
C
.050 NOM.
F
G
H
I
J KL
M
4X.060 R
.210
.208
D
E
FULL R
.525 / 13.34
.535 / 13.59
1.265 / 32.18
1.255 / 31.88
.120 / 3.25
.130 / 3.30
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TVU150 NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射頻功率晶體管(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
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