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參數(shù)資料
| 型號： | TZA1047HL/M1B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 消費(fèi)家電 |
| 英文描述： | SPECIALTY CONSUMER CIRCUIT, PQFP64 |
| 封裝： | 10 X 10 MM, 1.4 MM HEIGHT, PLASTIC, MS-026, SOT314-2, LQFP-64 |
| 文件頁數(shù)： | 42/69頁 |
| 文件大?。?/td> | 324K |
| 代理商： | TZA1047HL/M1B |
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9397 750 14664
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 1 June 2005
47 of 69
Philips Semiconductors
TZA1047
Preprocessor IC for CD and DVD rewritable
7.16.3 Operation
The fast serial bus is used to program those registers that require a fast update rate: GRF
(RF path VGA), DCRF (RF path DC compensation, used as a quasi AC-coupling) and
GPP (P-P Processor Amplier gain). These three parameters can be controlled in
closed-loop mode by the codec IC to achieve AGC for both the RF path and the push-pull
path. The I2C-bus is not fast enough to allow this type of operation. The FSB interface will
support clock speeds of up to 16 MHz.
There is no power-on reset function in the TZA1047 fast serial bus interface. Before
start-up, the registers will contain random data. Therefore, to ensure correct operation, all
registers must be written to at least once after start-up.
7.16.4 Fast serial bus control registers
[1]
res = reserved.
The FSB control register addresses are backwards compatible with the TZA1031 and
TZA1039 devices.
8.
Limiting values
[1]
Equivalent to discharging a 100 pF capacitor via a 1.5 k
series resistor with a rise time of 15 ns.
[2]
Equivalent to discharging a 200 pF capacitor via a 2.5 mH series inductor.
Table 25:
Fast serial bus register layout
ADDR.
[3:0]
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
0011
res
GRF[3]
GRF[2]
GRF[1]
GRF[0]
res
0100
res
DCRF[5] DCRF[4] DCRF[3] DCRF[2] DCRF[1] DCRF[0]
0101
res
RDCRF
PDCRF
1100
res
GPP[3]
GPP[2]
GPP[1]
GPP[0]
Table 26:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
0.5
+5.5
V
Vi
input voltage
0.5
VDD + 0.5 V
Tamb
ambient temperature
0
70
°C
Tstg
storage temperature
55
+125
°C
Vesd
electrostatic discharge voltage
human body
model
2 000
+2 000
V
machine
model
150
+150
V
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