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參數(shù)資料
| 型號(hào)： | UL62H256BS1K35 |
| 元件分類： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 35 ns, PDSO28 |
| 封裝： | 0.330 INCH, SOP-28 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 82K |
| 代理商： | UL62H256BS1K35 |
1
September 26, 2002
UL62H256B
32768 x 8 bit static CMOS RAM
35 and 55 ns Access Time
Common data inputs and
data outputs
Three-state outputs
Typ. operating supply current
35 ns: 45 mA
55 ns: 30 mA
Standby current < 30 μA at 125 °C
Power supply voltage 2.5 V
Operating temperature range
-40 °C to 85 °C
-40 °C to 125 °C
CECC 90000 Quality Standard
ESD protection > 2000 V
(MIL STD 883C M3015.7)
Latch-up immunity >100 mA
Package: SOP28 (300/330 mil)
The UL62H256B is a static RAM
manufactured using a CMOS pro-
cess technology with the following
operating modes:
- Read
- Standby
- Write
- Data Retention
The memory array is based on a
6-Transistor cell.
The circuit is activated by the fal-
ling edge of E. The address and
control inputs open simultaneously.
According to the information of W
and G, the data inputs, or outputs,
are active. In a Read cycle, the
data outputs are activated by the
falling edge of G, afterwards the
data word will be available at the
outputs
DQ0-DQ7.
After
the
address change, the data outputs
go High-Z until the new information
is available. The data outputs have
no preferred state. The Read cycle
is finished by the falling edge of W,
or by the rising edge of E, respec-
tively.
Data retention is guaranteed down
to 1.5 V. With the exception of E, all
inputs consist of NOR gates, so
that no pull-up/pull-down resistors
are required.
Low Voltage Automotive Fast 32K x 8 SRAM
Pin Configuration
Top View
Signal Name
Signal Description
A0 - A14
DQ0 - DQ7
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
E
G
W
VCC
VSS
Pin Description
1
A14
VCC
28
2
A12
W
27
4
A6
A8
25
5
A5
A9
24
3
A7
A13
26
6
A4
A11
23
7
A3
G
22
8
A2
A10
21
12
DQ1
DQ5
17
9
A1
E
20
10
A0
DQ7
19
11
DQ0
DQ6
18
13
DQ2
DQ4
16
14
VSS
DQ3
15
SOP
Features
Description
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UL631H256 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C35G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C45G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
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