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參數(shù)資料
| 型號： | UN511L |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 444K |
| 代理商： | UN511L |
3
UNR511x Series
SJH00022BED
Characteristics charts of UNR5110
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Common characteristics chart
P
T
T
a
0
50
100
150
200
250
0
40
80
120
160
Ambient temperature T
a
(
°
C)
T
T
0
0
12
2
10
4
8
6
120
100
80
60
40
20
Collector-emitter voltage V
CE
(V)
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.90.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3
mA
0.2
mA
0.1
mA
0.01
0.1
0.1
1
10
100
1
10
100
C
C
Collector current I
C
(mA)
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
100
200
300
400
10
100
1
000
F
F
Collector current I
C
(mA)
V
CE
=
–10 V
T
a
=
75
°
C
25
°
C
25
°
C
■
Electrical Characteristics (continued)
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance
UNR5114
0.17
0.21
0.25
ratio
UNR511H
0.17
0.22
0.27
UNR511T
0.47
UNR511F
0.37
0.47
0.57
UNR511V
1.0
UNR5111/5112/5113/511L
0.8
1.0
1.2
UNR511E
1.70
2.14
2.60
UNR511D
3.7
4.7
5.7
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
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| UNR5210 | Composite Device - Transistors with built-in Resistor |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UN511M | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN511N | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN511T | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN511V | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UN511Z | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
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