參數(shù)資料
型號: UN9210J
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN
文件頁數(shù): 3/19頁
文件大?。?/td> 400K
代理商: UN9210J
3
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Electrical Characteristics (continued)
T
a
=
25
°
C
±
3
°
C
Characteristics charts of UNR9210J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Common characteristics chart
P
T
T
a
150
0
0
160
40
120
80
125
100
75
50
25
Ambient temperature T
a
(
°
C)
T
T
0
12
2
10
4
8
6
0
60
50
40
30
20
10
Collector-emitter voltage V
CE
(V)
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.1 mA
0.3 mA
0.7 0.0.0.4 mA
0.90.8 mA
10
2
10
1
10
1
1
10
10
2
1
10
10
2
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
C
C
Collector current I
C
(mA)
0
1
100
200
300
400
10
10
2
10
3
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
F
F
Collector current I
C
(mA)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Emitter-base resistance
UNR921CJ
R
2
30%
47
+
30%
k
Rasistance
UNR921MJ
R
1
/R
2
0.047
ratio
UNR921NJ
0.1
UNR9218J/9219J
0.08
0.10
0.12
UNR9214J
0.17
0.21
0.25
UNR921TJ
0.47
UNR921FJ
0.37
0.47
0.57
UNR921AJ/921VJ
1.0
UNR9211J/9212J/9213J/921LJ
0.8
1.0
1.2
UNR921KJ
1.70
2.13
2.60
UNR921EJ
1.70
2.14
2.60
UNR921DJ
3.7
4.7
5.7
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