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參數(shù)資料
| 型號： | UN921TJ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN |
| 文件頁數(shù)： | 13/19頁 |
| 文件大?。?/td> | 400K |
| 代理商： | UN921TJ |
13
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Characteristics charts of UNR921EJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR921FJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
12
2
10
4
8
6
0
60
50
40
30
20
10
T
a
=
25
°
C
B
= 1.0 mA
0.1 mA
0.2 mA
0.50.4 0.3 mA
0.6 0.7 mA
00.9 I
Collector-emitter voltage V
CE
(V)
C
C
10
2
10
1
10
1
1
10
10
2
1
10
10
2
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
C
C
Collector current I
C
(mA)
0
1
40
80
120
160
10
10
2
10
3
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
F
F
Collector current I
C
(mA)
0
10
1
6
5
4
3
2
1
1
10
10
2
f
=
1MHz
I
E
=
0
T
a
=
25
°
C
C
(
o
Collector-base voltage V
CB
(V)
10
2
10
1
10
1
1
10
10
2
1
10
10
2
V
O
=
0.2 V
T
a
=
25
°
C
I
I
Output current I
O
(mA)
1
1.5
10
10
2
10
3
10
4
4.0
3.5
3.0
2.5
2.0
Input voltage V
IN
(V)
V
O
=
5 V
T
a
=
25
°
C
O
O
μ
A
0
12
2
10
4
8
6
0
240
200
160
120
80
40
T
a
=
25
°
C
I
B
=
1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 0.7 mA
0.8 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
C
C
10
2
10
1
10
1
1
10
10
2
1
10
10
2
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
C
C
Collector current I
C
(mA)
0
1
40
80
120
160
10
10
2
10
3
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
F
F
Collector current I
C
(mA)
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