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參數(shù)資料
| 型號(hào)： | UN921TJ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN |
| 文件頁數(shù)： | 2/19頁 |
| 文件大?。?/td> | 400K |
| 代理商： | UN921TJ |
2
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
50
V
Collector-emitter voltage (Base open)
50
V
Collector-base cut-off current (Emitter open)
I
CBO
0.1
μ
A
μ
A
Collector-emitter cut-off current (Base open)
I
CEO
I
EBO
0.5
Emitter-
base
UNR9210J/9215J/
9216J/9217J/921BJ
0.01
mA
cut-off
current
(Collector
921EJ/921MJ/921NJ/921TJ
UNR9213J/921AJ
0.1
UNR9212J/9214J/921DJ/
0.2
open)
UNR9211J
0.5
UNR921FJ/921KJ
1.0
UNR9219J
1.5
UNR9218J/921CJ/921LJ/921VJ
2.0
Forward
UNR921VJ
h
FE
V
CE
=
10 V, I
C
=
5 mA
6
20
current
UNR9218J/921KJ/921LJ
20
transfer
UNR9219J/921DJ/921FJ
30
ratio
UNR9211J
35
UNR9212J/921EJ
60
UNR9213J/9214J/921AJ/
921CJ/921MJ
80
UNR921NJ/921TJ
80
400
UNR9210J/9215J/9216J/
9217J/921BJ
160
460
Collector-emitter saturation voltage
V
CE(sat)
V
OH
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
5 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
Output voltage high-level
4.9
V
Output voltage low-level
V
OL
0.2
V
UNR9213J/921BJ/921KJ
UNR921DJ
UNR921EJ
UNR921AJ
Transition frequency
f
T
150
MHz
Input
UNR9218J
R
1
30%
0.51
+
30%
k
resistance UNR9219J
1
UNR921MJ/921VJ
2.2
UNR9216J/921FJ/921LJ/921NJ
4.7
UNR9211J/9214J/9215J/921KJ
10
UNR9212J/9217J/921TJ
22
UNR9210J/9213J/921DJ/921EJ
47
UNR921AJ/921BJ
100
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