參數資料
型號： UNR4215
廠商： PANASONIC CORP
元件分類： 小信號晶體管
英文描述： Flash Memory IC; Supply Voltage Max:5.25V
中文描述： 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, NS-B1, 3 PIN
文件頁數： 1/14頁
文件大?。?/td> 334K
代理商： UNR4215
Transistors with built-in Resistor
UNR421x Series
(UN421x Series)
Silicon NPN epitaxial planar type
1
Publication date: December 2003
SJH00020BED
For digital circuits
■
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
■
Resistance by Part Number
(R
1
)
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
10 k
4.7 k
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
4.7 k
4.7 k
UNR4210 (UN4210)
UNR4211 (UN4211)
UNR4212 (UN4212)
UNR4213 (UN4213)
UNR4214 (UN4214)
UNR4215 (UN4215)
UNR4216 (UN4216)
UNR4217 (UN4217)
UNR4218 (UN4218)
UNR4219 (UN4219)
UNR421D (UN421D)
UNR421E (UN421E)
UNR421F (UN421F)
UNR421K (UN421K)
UNR421L (UN421L)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
4.0
±
0.2
0.75 max.
2.0
±
0.2
0.45
(2.5) (2.5)
0.7
±
0.1
2
3
1
+0.20
0.45
+0.20
7
3
±
0
(
(
1
±
0
B
R
1
R
2
C
E
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
50
V
Collector current
100
mA
Total power dissipation
P
T
300
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
相關PDF資料
PDF描述
UNR4216 Flash Memory IC; Access Time, Tacc:55ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting Type:Surface Mount
UNR4217 Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:1Mbit; Package/Case:32-TSOP; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
UNR4218 Flash Memory IC; Access Time, Tacc:55ns; Package/Case:32-TSOP; Leaded Process Compatible:No; Memory Configuration:128K x 8; Memory Size:1Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No
UNR4219 Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PDIP; Supply Voltage Max:5.5V; Access Time, Tacc:55ns; Mounting Type:Surface Mount RoHS Compliant: Yes
UNR421D Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V; Access Time, Tacc:55ns; Mounting Type:Surface Mount RoHS Compliant: Yes
相關代理商/技術參數
參數描述
UNR4215(UN4215) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內蔵型トランジスタ
UNR4216 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UNR4216(UN4216) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor
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