參數(shù)資料
型號(hào)： UNR4215
廠商： PANASONIC CORP
元件分類： 小信號(hào)晶體管
英文描述： Flash Memory IC; Supply Voltage Max:5.25V
中文描述： 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, NS-B1, 3 PIN
文件頁(yè)數(shù)： 5/14頁(yè)
文件大?。?/td> 334K
代理商： UNR4215
5
UNR421x Series
SJH00020BED
Characteristics charts of UNR4213
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
0.1
6
5
4
3
2
1
1
10
100
C
o
Collector-base voltage V
CB
(V)
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
0.01
0.1
0.1
1
10
100
1
10
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
0
0
12
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
00.0.7 mA
0.01
0.1
0.1
1
10
100
1
10
100
C
C
Collector current I
C
(mA)
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
100
200
300
400
10
100
1
000
F
F
Collector current I
C
(mA)
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0.01
0.1
0.1
1
10
100
1
10
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
0
0.1
6
5
4
3
2
1
1
10
100
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
C
o
Collector-base voltage V
CB
(V)
相關(guān)PDF資料
PDF描述
UNR4216 Flash Memory IC; Access Time, Tacc:55ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting Type:Surface Mount
UNR4217 Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:1Mbit; Package/Case:32-TSOP; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
UNR4218 Flash Memory IC; Access Time, Tacc:55ns; Package/Case:32-TSOP; Leaded Process Compatible:No; Memory Configuration:128K x 8; Memory Size:1Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No
UNR4219 Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PDIP; Supply Voltage Max:5.5V; Access Time, Tacc:55ns; Mounting Type:Surface Mount RoHS Compliant: Yes
UNR421D Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V; Access Time, Tacc:55ns; Mounting Type:Surface Mount RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UNR4215(UN4215) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ
UNR4216 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UNR4216(UN4216) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor
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