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參數(shù)資料
| 型號： | UPA1437 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| 中文描述： | 進步黨硅晶體管陣列低功率高速開關使用工業(yè)用達林頓晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 62K |
| 代理商： | UPA1437 |
μ
PA1437
2
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector to Emitter
Sustaining Voltage
V
CEO(SUS)
–100
V
I
C
= –1.5 A, I
B
= –1.5 mA,
L = 1 mH
Collector Leakage Current
I
CBO
–10
μ
A
V
CB
= –100 V, I
E
= 0
Emitter Leakage Current
I
EBO
–1
mA
V
EB
= –5 V, I
C
= 0
DC Current Gain
h
FE1
*
1000
—
V
CE
= –2 V, I
C
= –0.5 A
DC Current Gain
h
FE2
2000
20000
—
V
CE
= –2 V, I
C
= –1.5 A
Collector Saturation Voltage
V
CE(sat)
*
–0.9
–1.2
V
I
C
= –1.5 A, I
B
= –1.5 mA
Base Saturation Voltage
V
BE(sat)
*
–1.5
–2
V
I
C
= –1.5 A, I
B
= –1.5 mA
Turn On Time
t
on
1
μ
s
Storage Time
t
stg
3
μ
s
Fall Time
t
f
1
μ
s
*
PW
≤
350
μ
s, Duty Cycle
≤
2 % / pulsed
SWITCHING TIME TEST CIRCUIT
I
B2
V
IN
PW
PW ..
Duty Cycle
≤
2 %
V
BB
..
I
B1
I
C
T.U.T.
R
L
..
V
CC
..
Base Current
Wave Form
Collector
Current
Wave Form
I
B2
I
B1
I
C
10 %
90 %
t
on
t
stg
t
f
I
C
= –1.5 A
I
B1
= –I
B2
= –1.5 mA
V
CC
..
L
..
See test circuit
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1437H | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| UPA1438H | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL POWER TRANSISTOR ARRAY LOW SPEED SWITCHING(DARLINGTON) |
| UPA1452 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING |
| UPA1453 | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE |
| UPA1453H | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE |
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