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參數(shù)資料
| 型號： | UPA1437 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| 中文描述： | 進(jìn)步黨硅晶體管陣列低功率高速開關(guān)使用工業(yè)用達(dá)林頓晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 62K |
| 代理商： | UPA1437 |
μ
PA1437
3
TYPICAL CHARACTERISTICS (T
a
= 25 C)
DERATING CURVE OF SAFE
OPERATING AREA
d
0
100
T
C
- Case Temperature - C
SAFE OPERATING AREA
I
C
–1
–10
V
CE
- Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
0
4
T
a
- Ambient Temperature - C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
0
30
T
C
- Case Temperature - C
DC CURRENT GAIN vs. COLLECTOR CURRENT
h
F
–0.01
100000
I
C
- Collector Current - A
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
V
C
V
B
–0.01
–100
I
C
- Collector Current - A
80
60
40
20
50
100
150
S/bLimted
DsiptonLmtd
–5
–1
–0.5
–0.1
–0.05
–0.01
–5
–10
–50
–100
V
C
T
C
= 25 C
Single Pulse
NEC
PA1437
3
2
1
25
50
75
100
125
150
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
20
10
25
50
75
100
125
150
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
10000
1000
100
–0.1
–1.0
–10
V
CE
= –2.0 V
Pulsed
125 C
75 C
25 C
T
a
= –25 C
I
C
= 1000·I
B
Pulsed
–10
–1.0
–0.1
–0.1
–1.0
–10
V
BE (sat)
V
CE (sat)
I
C(pulse)
MAX.
I
C(DC)
MAX.
LDsspaion
S/bLmted
1ms
PW =30 s
μ
μ
μ
100 s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1437H | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| UPA1438H | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL POWER TRANSISTOR ARRAY LOW SPEED SWITCHING(DARLINGTON) |
| UPA1452 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING |
| UPA1453 | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE |
| UPA1453H | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE |
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