參數(shù)資料
型號(hào): UPA1572BH
廠商: NEC Corp.
英文描述: N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE
中文描述: N溝道功率場(chǎng)效應(yīng)晶體管陣列切換工業(yè)用途
文件頁數(shù): 2/8頁
文件大小: 89K
代理商: UPA1572BH
2
μ
PA1572B
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Drain Leakage Current
I
DSS
10
μ
A
V
DS
= 60 V, V
GS
= 0
Gate Leakage Current
I
GSS
±
10
μ
A
V
GS
=
±
20 V, V
DS
= 0
Gate Cutoff Voltage
V
GS (off)
1.0
2.0
V
V
DS
= 10 V, I
D
= 1.0 mA
Forward Transfer Admittance
Y
fs
0.5
S
V
DS
= 10 V, I
D
= 1.0 A
Drain to Source ON-Resistance
R
DS (on)1
0.3
0.6
V
GS
= 10 V, I
D
= 1.0 A
Drain to Sourse ON-Resistance
R
DS (on)2
0.4
0.8
V
GS
= 4.0 V, I
D
= 1.0 A
Input Capacitance
C
iss
110
pF
V
DS
= 10 V, V
GS
= 0, f = 1.0 MHz
Output Capacitance
C
oss
70
pF
Reverse Transfer Capacitance
C
rss
25
pF
Turn-on Delay Time
t
d (on)
30
ns
I
D
= 1.0 A, V
GS (on)
= 10 V, V
DD
= 30 V, R
L
= 30
Rise Time
t
r
200
ns
Turn-off Delay Time
t
d (off)
100
ns
Fall Time
t
f
160
ns
Total Gate Charge
Q
G
5.4
nC
V
GS
= 10 V, I
D
= 2.0 A, V
DD
= 48 V
Gate to Source Charge
Q
GS
0.7
nC
Gate to Drain Charge
Q
GD
2.0
nC
Body Diode Forward Voltage
V
F (S-D)
1.0
V
I
F
= 2.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
130
ns
I
F
= 2.0 A, V
GS
= 0, di/dt = 50 A/
μ
s
Reverse Recovery Charge
Q
rr
110
nC
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