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參數(shù)資料
| 型號(hào)： | UPA1814GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 66K |
| 代理商： | UPA1814GR-9JG |
Data Sheet D13804EJ1V0DS00
4
μ
PA1814
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
15
30
25
35
20
V
GS
=
4.0 V
T
A
= 125
C
75
C
25
C
25
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
10
20
30
V
GS
=
4.5 V
T
A
= 125
C
75
C
25
C
25
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
10
20
5
15
25
V
GS
=
10 V
T
A
= 125
C
75
C
25
C
25
C
50
25
20
15
10
5
30
0
50
100
150
R
D
-
Tch - Channel Temperature -
C
I
D
=
3.5 A
V
GS
=
4.0 V
4.5 V
10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0
10
20
30
40
50
4
8
12
16
20
R
D
-
V
GS
- Gate to Source Voltage - V
I
D
=
3.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
1
100
1000
10000
100
10
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
i
,
o
,
r
V
DS
- Drain Source Voltage - V
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
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