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參數(shù)資料
| 型號(hào)： | UPA1814GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 66K |
| 代理商： | UPA1814GR-9JG |
Data Sheet D13804EJ1V0DS00
5
μ
PA1814
0.1
1
10
I
D
- Drain Current - A
t
(
,
(
,1000
10
td
(off)
td
(on)
tf
tr
SWITCHING CHARACTERISTICS
1
V
DD
=
15 V
V
GS(on)
=
10
V
R
G
0.01
0.1
1
100
10
0.6
0.4
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
V
F(S-D)
- Source to Drain Voltage - V
Q
g
- Gate Charge - nC
0
20
10
30
35
40
15
5
25
DYNAMIC INPUT CHARACTERISTICS
V
G
-
I
D
=
7.0 A
2
4
6
8
10
12
V
DD
=
24 V
15 V
6 V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
10
0.1
0.001
1
1000
100
0.01
0.1
1
10
1000
100
Mounted on ceramic
substrate of
50 cm
2
x
1.1 mm
Single Pulse
62.5
C/W
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