參數(shù)資料
型號: UPA1856
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場效應晶體管開關
文件頁數(shù): 4/8頁
文件大小: 77K
代理商: UPA1856
Data Sheet D13808EJ2V0DS00
4
μ
PA1856
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
40
T
A
= 125
C
75
C
25
C
25
C
60
80
100
V
GS
=
2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
40
T
A
= 125
C
75
C
25
C
25
C
60
80
100
V
GS
=
2.7 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
30
T
A
= 125
C
T
A
= 75
C
T
A
=
25
C
T
A
= 25
C
40
60
50
70
V
GS
=
4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
20
T
A
= 125
C
75
C
25
C
25
C
30
50
40
60
V
GS
=
4.5 V
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -C
I
D
=
2.5 A
50
0
50
100
150
20
60
40
100
80
R
D
-
V
GS
=
2.5 V
2.7 V
4.0 V
4.5 V
0
20
60
40
80
100
120
2
V
GS
- Gate to Source Voltage - V
4
6
8
10
12
R
D
-
I
D
=
2.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
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