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參數(shù)資料
| 型號(hào)： | UPA1858GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | UPA1858GR-9JG |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
MOS FIELD EFFECT TRANSISTOR
μ
PA1858
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.G16276EJ1V0DS00 (1st edition)
Date Published October 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The
μ
PA1858 is a switching device, which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power management of portable
machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 24.5 m
MAX. (V
GS
=
4.5 V, I
D
=
2.5 A)
R
DS(on)2
= 25.5 m
MAX. (V
GS
=
4.0 V, I
D
=
2.5 A)
R
DS(on)3
= 38 m
MAX. (V
GS
=
2.5 V, I
D
=
2.5 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1858GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
12
m
5.0
m
20
2.0
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (2 units)
Note2
I
D(DC)
A
I
D(pulse)
A
P
T
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
4
8
5
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0
±
0.1
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
0.25
0.5
0.6
+0.15
3
°
+5
°
–3
°
1.2 MAX.
1.0±0.05
0.1±0.05
EQUIVALENT CIRCUITS
Drain 1
Source 1
Body
Diode
Gate
Protection
Diode
Gate 1
Source 2
Body
Diode
Gate
Protection
Diode
Gate 2
Drain 2
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