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參數(shù)資料
| 型號(hào)： | UPA1902 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 132K |
| 代理商： | UPA1902 |
Data Sheet G16634EJ1V0DS
2
μ
PA1902
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 3.5 A
3.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 3.5 A
17
22
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 3.5 A
22
30
m
Input Capacitance
C
iss
V
DS
= 10 V
780
pF
Output Capacitance
C
oss
V
GS
= 0 V
180
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
120
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 1.0 A
16
ns
Rise Time
t
r
V
GS
= 10 V
10
ns
Turn-off Delay Time
t
d(off)
R
G
= 6.0
108
ns
Fall Time
t
f
56
ns
Total Gate Charge
Q
G
V
DD
= 15 V
8.0
nC
Gate to Source Charge
Q
GS
V
GS
= 5.0 V
2.7
nC
Gate to Drain Charge
Q
GD
I
D
= 7.0 A
3.4
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 7.0 A, V
GS
= 0 V
0.84
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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| UPA1902TE | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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| UPA1910 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1910TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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