參數(shù)資料
型號: UPA1902
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 5/6頁
文件大?。?/td> 132K
代理商: UPA1902
Data Sheet G16634EJ1V0DS
5
μ
PA1902
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
D
0
20
40
60
80
0
5
10
15
20
25
Pulsed
I
D
= 3.5 A
V
GS
- Gate to Source Voltage - V
R
D
0
10
20
30
40
50
-50
0
50
100
150
I
D
= 3.5 A
Pulsed
V
GS
= 4.5 V
10 V
T
ch
- Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
i
,
o
,
r
10
100
1000
10000
0.1
1
10
100
V
GS
= 0 V
f = 1MHz
C
iss
C
r ss
C
oss
V
DS
- Drain to Source Voltage - V
t
d
,
r
,
d
,
f
1
10
100
1000
0.1
1
10
V
DD
= 15 V
V
GS
= 10 V
R
G
= 6.0
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
V
G
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V
GS
= 5.0 V
I
D
= 7.0 A
V
DD
= 24 V
15 V
6 V
Q
G
- Gate Charge - nC
I
F
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
1.4
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
相關(guān)PDF資料
PDF描述
UPA1902TE N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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