參數(shù)資料
型號: UPA2451C
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS場效應(yīng)管
文件頁數(shù): 4/8頁
文件大?。?/td> 179K
代理商: UPA2451C
Data Sheet G18793EJ1V0DS
4
μ
PA2451C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
D
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1
1.2
Pulsed
V
GS
= 4.5 V
4.0 V
3.1 V
2.5 V
V
DS
- Drain to Source Voltage - V
D
0.001
0.01
0.1
1
10
0
0.5
1
1.5
2
2.5
3
V
DS
= 10.0 V
Pulsed
25
°
C
75
°
C
125
°
C
T
A
=
25°C
V
GS
- Gate to Source Voltage - V
GATE TO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
G
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
V
DS
= 10.0 V
I
D
= 1.0 mA
T
ch
- Channel Temperature -
°
C
f
0.01
0.1
1
10
0.01
0.1
1
10
V
DS
= 10.0 V
Pulsed
T
A
=
25
°
C
25
°
C
75
°
C
125
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
D
Ω
0
10
20
30
40
0.1
1
10
100
Pulsed
V
GS
= 2.5 V
3.1 V
4.0 V
4.5 V
I
D
- Drain Current - A
D
Ω
0
10
20
30
40
0
2
4
6
8
10
12
I
D
= 4.0 A
Pulsed
V
GS
- Gate to Source Voltage - V
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