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參數(shù)資料
| 型號： | UPA2451C |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應管 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 179K |
| 代理商： | UPA2451C |
Data Sheet G18793EJ1V0DS
7
μ
PA2451C
5. This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion
applied to the device should become below 2000
μ
.
Note1
If the rate of distortion exceeds 2000
μ
, the
characteristic of a device may be degraded and it may result in failure.
Figure 2. Direction of substrate and stress
The substrate that mounted the device is on a stand with a support width of 24 mm.
The device is turned downward. The stress is applied from a top.
Measurement position
Stress
Support width 24 mm
Substrate: 33 x 6 mm, t = 0.5 mm, FR-4
The direction of a device:
Device
Bend
Figure 3. Example of the bend and the rate of distortion
Note2
00
0.2
0.4
0.6
0.8
1
1000
2000
3000
4000
5000
6000
Bend - mm
T
μ
ε
Recommended condition
Note 1.
Definition of rate of distortion(written as
ε
in this document)
ε
= (l
l
0
)/l
0
l
0
: Distance for two arbitrary points before receiving stress.
l: Distance above-mentioned when receiving stress.
2.
The relation of the distortion and the bend changes with several conditions, such as a size of substrate and
so on.
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相關(guān)代理商/技術(shù)參數(shù) |
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| UPA2451CTL-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
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| UPA2451TL | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2451TL-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2452 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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